Abstract
In this work, short-channel semitransparent indium-tin-oxide (ITO)/Au electrode pairs were fabricated via inkjet printing and lift-off technology. The printed hydrophobic coffee stripes not only define the channel length of ITO/Au electrode pairs, but also help the realization of uniform short-channel In0.95Ga0.05Ox thin-film transistors (TFTs). The patterned semitransparent ITO/Au films, with the assistance of inkjet printing, exhibit an excellent conductivity compared to that of printed ITO films, and the short-channel In0.95Ga0.05Ox TFTs based on the semitransparent ITO/Au source/drain electrodes exhibit a maximum mobility of 2.9 cm2 V−1 s−1. This work proposes a method to prepare patterned high-conductive electrodes for TFTs with the assistance of inkjet printing.
Highlights
Metal-oxide thin-film transistors (MO-TFTs) have received much attention for their extensive application prospects in large-area electronics
To lower the fabrication cost, much attention is focused on the development of low-temperature, solution-processed MO-TFTs [3,4]
Researchers have made constant attempts to fabricate MO-TFTs via inkjet printing, but it is still difficult to directly print uniform MO-TFTs [5,6,7]
Summary
Metal-oxide thin-film transistors (MO-TFTs) have received much attention for their extensive application prospects in large-area electronics. Most of the reports on inkjet-printed MO TFTs are only focused on the semiconductor layers and demonstrated that the electrical performance of printed oxide semiconductors is comparable with the one based on other solution processing methods such as spin coating [8,9,10]. For the MO-TFTs based on the vacuum process, indium-tin-oxide (ITO) is an ideal material for S/D electrodes because of its acceptable electrical conductivity and ohmic contact. Printed ITO as S/D electrodes integrated in MO-TFTs have been reported, but the conductive films exhibit inferior electrical conductivity compared with those based on vacuum techniques [15,16]. The ITO/Au conductive film patterned via inkjet printing and lift-off technology, which showed excellent electrical conductivity, was utilized for S/D electrodes. The In0.95 Ga0.05 Ox TFTs based on the semitransparent ITO/Au S/D electrodes showed a maximum mobility of 2.9 cm V−1 s−1 and an Ion /Ioff ratio of bigger than 106
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
