Abstract

A simple, reliable, and electrically controllable way to develop complementary spin–orbit logic devices is highly desired. In this work, controllable field-free spin–orbit torque (SOT) switching is demonstrated in the Pt/IrMn/Co/Ru/CoPt/CoO/MgO heterojunction at room temperature, which makes it an attractive building block for complementary spin logic. By applying current pulses along two orthogonal directions, both the in-plane exchange bias at the IrMn/Co interface and the perpendicular magnetization switching of the CoPt layer can be well controlled. Using this controllable SOT switching, multiple spin logic operations and a spin logic half-adder are obtained. These results indicate that controllable SOT switching could provide a potentially applicable way toward efficient spin logic and in-memory computing devices.

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