Fully aromatic polyimide gate insulators with low temperature processability for pentacene organic thin-film transistors

Abstract

This paper demonstrates the effects of the imidization ratio of polyimide gate insulators on the performance of organic thin-film transistors (OTFTs). We report the synthetic results of polyimide films imidized at a temperature of 200 °C along with an easily removed organic base catalyst (1,8-diazabicyclo[5.4.0]undec-7-ene, DBU), and their application in gate insulators of organic thin-film transistors. The degree of imidization increased to almost 100% after a thermal treatment at 200 °C for 40 min in the presence of DBU. The performance of the pentacene OTFT dramatically improved by using low temperature cured polyimide film as the gate insulator.