Full-band quantum transport simulations of monolayer MoS&lt;inf&gt;2&lt;/inf&gt; transistors: Possibility of negative differential resistance

Jiwon Chang,Leonard F Register,Sanjay K Banerjee

doi:10.1109/drc.2013.6633800

Full-band quantum transport simulations of monolayer MoS<inf>2</inf> transistors: Possibility of negative differential resistance

Jiwon Chang, Leonard F Register + Show 1 more

https://doi.org/10.1109/drc.2013.6633800

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Publication Date: Jun 1, 2013

Affiliation: The University of Texas at Austin

#Non-equilibrium Green's Function Simulations #Metal-oxide-semiconductor Field Effect Transistors + Show 8 more

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Abstract

We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory (DFT).

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