Abstract
We propose an extended finite element-boundary integral method (EFE-BI) to model the electromagnetic (EM) behavior of RF-MEMS switches over a wide frequency range from UHF to terahertz. Our new method integrates EM with finite element heat transfer analysis to extract heat dissipation on the micrometer-scale switch beam due to the non-uniform radio frequency (RF) current distribution. The developed EFE-BI technique is an extension of the standard finite element-boundary integral (FE-BI) method to allow for accurate characterization of RF-MEMS structures whose entire size is a small fraction of a wavelength (λ/250 or less) and may contain dimensions in the order of λ/50 000 or less. Our model predictions exhibit good agreement with experimental results obtained independent of the current study.
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