Abstract
Full-wave dispersive analysis and modeling of 2D plasmon propagation in the channel of a biased ungated high-electron mobility transistor (HEMT) are presented. The numerical analysis is based on the simultaneous solution of the hydrodynamic transport model and Maxwell’s equations using the finite difference time domain method. The dispersive Drude–Lorentz model is employed to study the propagation of 2D plasmons in the 2D electron gas layer embedded in an InGaAs substrate in THz frequencies. The effect of dispersion on the phase and attenuation constants is investigated. Moreover, the proposed dispersive full-wave model is applied to a lossy metallic grating HEMT, which can be used in a THz detector. The results demonstrate strong influence of the dispersion characteristics of InGaAs on electromagnetic field distribution in the channel.
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