Full-solution-processed high mobility zinc-tin-oxide thin-film-transistors

Abstract

The full solution-processed oxide thin-film-transistors (TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide (ZTO) semiconductor and aluminium (Al2O3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al2O3 dielectrics’ preparation technology on ZTO TFTs’ performance was studied. Comparing the ZTO TFTs using the spin-coated Al2O3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al2O3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.