Abstract
Different metallization options that allow filling 30nm 1/2pitch interconnect trenches have been explored and their full reliability performance has been benchmarked to conventional PVD TaNTa/PVD Cu seed based metallizations. CVD Co as seed enhancement layer shows no deterioration in barrier performance and improved electromigration performance, but the activation energy for electromigration was 0.68+/-0.20eV, which is at the lower end of the expected value of 0.85-0.95eV for this parameter. When integrating our trenches in a k=3.2 non-porous SiCOH low-k material, PVD RuTa barriers with 90%Ru and 10%Ta show degraded barrier performance and significant lowering of activation energy for electromigration (0.59+/-0.05eV) while when using SiO2 as intermetal dielectric, no significant reliability deterioration is observed. Finally, it is shown that, using an optimized PVD Cu seed, standard PVD TaNTa-barriers give excellent barrier performance and that typical electromigration lifetime specs can be met with this metallization scheme down to 30nm 1/2pitch.
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