Abstract
All-electrostatic generation and control of both spin and valley polarizations provides a highly promising route towards much smaller and energy-efficient nanoscale devices. However, the requirement of broken time reversal symmetry is a serious limitation in this procedure. Here, we show that the chiral spin-resolved topological edge states in each valley of the two-dimensional hexagonal materials, aid to get round this restriction. By topological analysis of the spin and valley dependent edge states, we demonstrate that bulk-to-edge transport in these materials allows all-electrostatic generation and control of fully polarized spin-valley data, preserved during a long enough time and distance. We also obtain an analytic relation for bulk-to-edge transmission and show that the perfect transmission is insensible to the applied electric fields which enables even more convenient implementation of this scheme in spin- and valley-based devices.
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