Full-Electrical Writing and Reading of Magnetization States in a Magnetic Junction with Symmetrical Structure and Antiparallel Magnetic Configuration.

Abstract

Full-electrical writing and reading of magnetization states are vital for the development of next-generation spintronic devices with high density and ultralow-power consumption. Here, we proposed a method to realize the full-electrical writing and reading of magnetization states via a structural design, which only requires a symmetrical device structure and an antiparallel magnetic configuration. CrBr3, h-BN, and 1T-MnSe2 were selected to construct the device of CrBr3/h-BN/1T-MnSe2/h-BN/CrBr3, where the magnetization of two CrBr3 layers was fixed to the antiparallel state. By changing the direction and magnitude of the applied electric field, it is proved that the magnetization of 1T-MnSe2 could be reversed. Moreover, the device energies before and after the magnetization reversal are the same when the applied electric field is removed due to the structural symmetry. Meanwhile, the magnetic anisotropy energy of 1T-MnSe2 could induce an energy barrier, to guarantee the nonvolatile magnetization reversal in the present device. In addition, the tunnel magnetoresistance ratio was found up to 421%, showing a promising application to full-electrically write and read magnetization in spintronics. The present study likely promotes the development of full-electrical and ultralow-power spintronics devices.