Abstract
Full chemical mechanical polishing (CMP) process integration of a W/TiN damascene metal gate has been optimized and is demonstrated to be compatible with ULSI circuit fabrication. Highly uniform and reliable electrical characteristics are achieved for widely ranged MOS pattern structures (from 0.1-/spl mu/m gate transistors up to 0.6-mm/sup 2/ capacitors). CVD TiN film as a damascene gate electrode shows excellent properties for MOS performances and gate oxide integrity even on ultrathin gate oxide (2-nm SiO/sub 2/).
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