Abstract
The GEMS (General Monte Carlo Semiconductor) simulator is a full band ensemble program developed at Mid-Sweden University. A principal objective of the project is to create a flexible tool that can be used for the exploration of properties of new semiconductor materials as well as devices fabricated of these materials. Both cubic and hexagonal crystal symmetries can be handled with the simulator, and any material with these symmetries can be simulated if an appropriate electronic band structure together with the parameters for the scattering mechanisms is provided. During the development of GEMS a large number of studies have been performed of bulk charge transport and device characteristics. The simulated materials are 2H-, 3C-, 4H- and 6H-SiC, as well as silicon. This presentation discusses the charge transport properties of the studied SiC polytypes, and the resulting performance of the simulated devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
