Abstract
A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the non-equilibrium Green’s function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model [S. C. Jain and D. J. Roulston, Solid-State Electron. 34, 453 (1991)]. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. Empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall, the presented model reproduces experimental data well.
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