Full-atomistic nanoscale modeling of the ion beam sputtering deposition of SiO2 thin films

Abstract

The previously developed high-performance parallel method of the atomistic simulation of the ion beam sputtering deposition process is applied to the SiO2 thin films. Structural properties of deposited films such as density, concentration of point defects, ring statistics, as well as effects arising from the interaction of high energy sputtered Si atoms with the growing film are discussed.