Abstract

A complete mathematical model for measuring the parameters of the scattering matrix for a measurement object [Sx] in the form of a four-port network is developed, in which the mathematical model of the eight-port error is described by 16 parameters of the scattering matrix [E]. In addition, in comparison with the 12-parameter model of the eight-port error network, four parameters are included, which allow taking into account leaks, parasitic transmissions of microwave modules under study (microwave microassemblies). Due to the use of matrix analysis methods, the equations in matrix form are obtained that connect the matrices of the measurement object [Sи] and the actual values of the matrix parameters [Sx], with the aim of enabling the solution of these equations instead of the scattering matrix [E] to use a transmition matrix [T] in the form of cellular matrices [Taa], [Tab], [Tba], [Tbb].

Highlights

  • A complete mathematical model for measuring the parameters of the scattering matrix for a measurement object [Sx] in the form of a four-port network is developed, in which the mathematical model of the eight-port error is described by 16 parameters of the scattering matrix [E]

  • In comparison with the 12-parameter model of the eight-port error network, four parameters are included, which allow taking into account leaks, parasitic transmissions of microwave modules under study

  • Due to the use of matrix analysis methods, the equations in matrix form are obtained that connect the matrices of the measurement object [Sи] and the actual values of the matrix parameters [Sx], with the aim of enabling the solution of these equations instead of the scattering matrix [E] to use a transmition matrix [T] in the form of cellular matrices [Taa], [Tab], [Tba], [Tbb]

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Summary

Introduction

A complete mathematical model for measuring the parameters of the scattering matrix for a measurement object [Sx] in the form of a four-port network is developed, in which the mathematical model of the eight-port error is described by 16 parameters of the scattering matrix [E]. В общем случае любой восьмиполюсник погрешностей характеризуется матрицей рассеяния 4-го порядка (n = 4), т. Представим процедуру моделирования погрешностей в виде рис. Такая математическая модель измерения является полной для ОИ в виде четырехполюсника.

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