Abstract
Fabrication of highly integrated circuits or microstructures is presently accomplished above all by means of dry chemical etching processes with mostly halogen containing etching gases being used. As a result of the decomposition of these gases in a plasma reactive radicals are formed. They react with solid silicon compounds to gaseous SiF4. Furthermore, partly highly toxic substances are generated in the exhaust gas flow by the recombination of other molecule fragments. For this reason, selected exhaust gases of RIE and PECVD facilities have been investigated by FTIR spectroscopy and evaluated with regard to their hazard potential and possible HF emission rate.
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