FTIR, Raman and XRD analysis of graphene oxide films prepared by modified Hummers method

Abstract

Graphene oxide (GO) is a promising material for energy storage device applications. Modified Hummers method (MHM) has been used to prepare GO films from graphite flakes by Sol-Gel method. With the aid of bridging agent dimethyldichlorosiline, structurally fine GO films were prepared. Fourier transform and infra-red (FTIR) spectrum of the GO thin film possesses absorption bands at 461, 594, 670, 803, 1020, 1243, 1457, 1544, 1627, 2850, 2926 and 3429 cm−1. A sharp OH− absorption band was revealed at 3429 cm−1. Two vibrational bands were noticed in the Raman spectrum for pure graphite flakes at 1578 and 2718 cm−1. However, for GO, five Raman vibrational bands were unveiled at 413, 1344, 1597, 2697 and 2945 cm−1. Among these bands, the mode at 1344 cm−1 was assigned to D-band and 1597 cm−1 was assigned to G-band. Compared to D-band, G-band was dominated for the GO films. Several times of centrifugation and ultra-sonication process have aided to obtain more intensity of G-band. In addition, 2D and D + G bands were also revealed in the GO films. X-ray diffraction (XRD) analysis was confirmed that a sharp peak at 10.64 degrees leads to the formation of GO thin film.