Abstract
Single crystal silicon were implanted at room temperature with 16O2+ and 14N2+ 30 keV ions in 1:1 ratio with fluences of 2.5×1017, 5×1017, 7.5×1017 and 1×1018 ions‐cm−2 to form silicon oxynitride layers. Rapid thermal annealing (RTA) of these samples was carried out at temperature of 623, 873 and 1173 K in nitrogen ambient for 5 min. Fourier transform infrared (FTIR), Micro‐Raman and ellipsometry measurements were performed on RTA samples to investigate the structure and phase. The FTIR studies show that the structures of ion‐beam synthesized oxynitride layers are strongly dependent on total ion‐fluence and annealing temperature. The Micro‐Raman studies on annealing revealed formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures for lower and higher ion fluences respectively with crystalline silicon beneath it. From the ellipsometry studies, the refractive index of the ion beam synthesized layers were found to be in 1.54–1.96 range.
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