Abstract
Compounds from tin oxide doped with gallium oxide and cerium oxide were synthesized. Thin films from (SnO2:Ga2O3,CeO2) with different doping ratios were prepared on glass and single crystal silicon as substrates with the use of the pulsed laser deposition technique. The results of FTIR spectrums analysis was presented. Varies heterojunctions were fabricated from (SnO2:Ga2O3,CeO2 /Cu2S/c-pSi) heterojunctions solar cell which are formed from two layers: the first was Cu2S and the second was layer from tin oxide doped with two oxides named gallium oxide and cerium oxide with different doping ratios (0, 0.03, 0.05, and 0.07). The heterojuntion (SnO2:5%Ga2O3 /Cu2S/c-pSi photovoltaic structure exhibits open circuit voltage (Voc) of 150mV, short circuit current (Isc) of 15mA, fill factor of 0.622and efficiency of conversion of 2.8% under an intensity of illumination of 100mW/cm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
