Abstract
In this paper a new C-MOS compatible fabrication process is presented for a nitrogen dioxide porous silicon (PS) sensor. Electrically insulated PS sensing layers and even free-standing PS membranes have been obtained by front side electrochemical micromachining, reducing in this way electrical leakage towards the crystalline substrate. The electrical behavior of the device in a controlled environment was measured by means of a volt–amperometric technique at constant bias. A huge variation of the current was detected at RT for NO 2 concentrations as low as 200 ppb (Δ G/ G=111). The interference of humidity, ethanol, methanol, CO and ozone is also discussed.
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