Abstract
Nanoscale copper wires are necessary to interconnect transistors and form logical circuits in microprocessors. Conductivity degradation in nanoscale metals leads to significant power wasted in the interconnect, but the mechanisms of this degradation remain poorly understood theoretically. Baruch Feldman et al. (pp.1791-1796) perform first-principles simulations of the electron scattering in copper and silver grain boundaries, one of the primary causes of conductivity degradation, and investigate the detailed determinants of scattering. The front cover image referring to this article shows multi-crystalline copper interconnect lines.
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