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Abstract
The memristor based on Ni-Al layered double hydroxide (Ni-Al LDHs) was investigated. The memristor be composed of oxadiazole-adsorbing Ni-Al LDHs composite active layer was researched. Experimental results show that memristors characteristic could be modulated by adsorbing oxadiazole with Ni-Al LDHs in active layer from gradual change to abrupt changes in resistive switching. While, Ni-Al LDHs devices show gradual current changes, and its synaptic plasticity and spike-time-dependent plasticity in Hebbian learning has been investigated; the device with adsorbed oxadiazole small molecules undergoes abrupt changes. This study shows the potential of nanocomposites that adsorb electrically active small molecules to modify the resistive switching characteristics of memristors and paves the way for the design of nanocomposite memristors for use in advanced devices.
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