From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

Abstract

The fifty year history of radiation effects in bipolar transistors at NSREC is summarized, covering neutron-induced displacement damage, total ionizing dose response (including enhanced low dose rate sensitivity, ELDRS) and single event effects. These phenomena, particularly TID and ELDRS in bipolar transistors, have received significant attention at NSREC. Several other radiation effects such as thermal mechanical shock, electrical overstress, prompt dose rate photoresponse and the response to neutral particle beams are not addressed.