Abstract

Diffraction efficiency (DE) and laser-induced damage threshold of Chirped pulse amplification (CPA) system diffraction gratings (DGs) are one of the main limiting factors for the anticipated progress of high peak power lasers. Optimization of a high reflectivity dielectric multilayer ZrO2/SiO2 stack mirror with a DG etched in the top SiO2 layer was carried out employing the Rigorous coupled wave analysis method. Two families of solutions possessing DE > 0.99 over the bandwidth of the 1030 nm wavelength ultrashort laser and withstanding different fabrication margins were identified for the Littrow configuration. DGs were produced and verified experimentally. Structures permitting variation in both the depth of the DG and filling factor without loss in DE were obtained for the 690 nm thick SiO2 layer. While the 770 nm thick layer permitted separation of the two parameters requiring either rigorous control of the DG depth or filling factor. DG realization technology was proposed employing electron beam lithography and inductively coupled plasma reactive ion etching. Measurements of the fabricated structures demonstrated 0.91 DE for the first diffraction order over the 60 nm bandwidth and under a 6° mounting error from the Littrow configuration. Spectral angular reflectance DE simulations and respective measurements indicated quantitative agreement. The work provides an integrated overview of high DE periodic structure numerical optimization and manufacturing roadmap which could be applied for the high-peak-power laser CPA system development.

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