From binary to multinary copper based nitrides – Unlocking the potential of new applications

Abstract

• Diversity of synthetic strategies towards copper nitrides as bulk or thin films. • Overview of conditions that allow to control the morphology and particle size. • Structural diversity of multinary copper nitrides and their emerging applications. This review summarizes the current knowledge on the chemistry of binary copper(I) nitride, Cu 3 N and its multinary derivatives containing either main group or transition metal elements. For many years, research in this area was focused on the development of copper nitride prepared in the form of thin films. Successful deposition of these materials has been achieved mainly by employing physical methods, which have provided materials suitable for potential application in optical data storage. However, for the last decade, attention has also been devoted to expanding the available options by which Cu 3 N can be synthesized and deposited. Consequently, the focus has switched to the development of chemical synthetic methods towards the fabrication of this semiconductor and to broadening the range of related compounds that might be discovered. Simultaneously, the formulation of novel techniques and the successful preparation of new nanostructured functional materials has resulted in the rapid evolution of new and relevant applications; e.g. catalytic and electrochemical. The overview presented here concentrates on the chemical methods that have been devised to synthesise both bulk samples and thin films of Cu 3 N. Our article also shows how these approaches have been developed to achieve significant progress in the creation of multinary copper based nitrides and in identifying their potential applications. It provides a concise history of previous copper nitride research and sets the context for the most current advances. These will no doubt provide the springboard for future research areas that will impact both transition metal nitride chemistry and materials science more generally.