From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation

Abstract

In complementary metal oxide semiconductor (CMOS) technology, well-defined unipolar transport in field-effect transistors (FETs) is a basic requirement for logic operations, which can be realized by controllable doping of the semiconductor with electrons (n-type) or holes (p-type). However, recent demonstration of polarity controllable transistors in 2D semiconductors provides a flexible way in circuit design with increased circuit integration density. Here we demonstrate the conversion of a bidirectional rectifier to a polarity-controllable transistor in black phosphorus (BP) by dual gate modulation. Electrical characterization of the BP bidirectional rectifier reveals a current rectification of ~35 at room temperature that increases to ~350 upon lowering the temperature to 110 K. Employing cross-linked PMMA as a top gate and combining it together with the global back gate of the SiO2 substrate, well-defined unipolar transport (n- or p-type) in BP could get accessed. This successful realization of polarity-controllable transistor in BP provides an alternative design for development of BP logic electronics.