Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach

Abstract

In this work, the frequency-domain Spectral Balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's Transport Equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data.