Frequency-temperature scaling of the CV characteristics for irradiated Si detectors

Abstract

The dependence of the CV characteristics on temperature and measurement frequency, f, for heavily irradiated silicon detectors is found to be reducible to a single dimensionless variable fτ, where τ is the dielectric relaxation time (which is strongly dependent on temperature) of the Si bulk. Such scaling behaviour can be understood within a simple model which is known to work well for non-irradiated detectors. This model also explains qualitatively the shape of the CV characteristics for the heavily irradiated detectors but fails to describe them quantitatively.