Frequency response modeling and optimization of a PIN photodiode based on GaN/InGaN adapted to photodetection at a wavelength of 633 nm

Abstract

In this paper, the frequency response calculation and optimization of PIN photodiodes based on GaN/InGaN, suitable for photodetection at the wavelength of 633 nm, are presented. The calculations of the impulse as well as the frequency response are performed using the impulse method. The frequency response optimization is a result of optimizing the transport of photo-generated carriers in the absorbent layer of the photodiode, using a mixed depletion region rather than a single absorbing depletion region. Cut-off frequencies of about 82 GHz and 48 GHz have been obtained in the case of transparent layer thickness of 500 nm and 1000 nm, respectively. The aforementioned results represent a very good improvement.