Abstract
The reduction of oxygen at p-GaAs occur by a current doubling route that involves the injection of ahole by the HO 2 intermediate. The theory of intensity modulated ac photocurrents is extended to include the current doubling effect as well as surface recombination processes. The hole injection process is shown to lead to a characteristic relaxation of the intensity modulated photocurrent that is apparent as an additional semicircle in the complex plane. The first order rate constant for the rate determining step in the current doubling process can be calculated directly from the maximum of this semicircle, and the values obtained are in good agreement with those derived from an earlier treatment of the steady state photocurrent response of the same system.
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