Abstract
Abstract The energy distribution of localized states was determined in undoped and PH 3 doped a -Si:H from frequency resolved EBIC measurements. The experiments are based on the theory developed by Oheda for the analysis of phase shift between sinusoidally modulated exciting light and its induced photocurrent. In the present attempt the photocurrent measurements are replaced by the EBIC measurements. Through the magnitude and phase shift of EBIC current at different frequencies and temperatures, the energy distribution of localized states in the range of 0.5 to 0.8 eV was obtained for the undoped and doped a -Si:H. The method is verified by comparing the results for n -type a -Si:H with that of those obtained from DLTS measurements performed on a Schottky junction prepared from the similar sample.
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