Abstract
This article presents a novel design methodology for wireless frequency multipliers using negative-image device models applicable to nonlinear devices. Negative-image device models of nonlinear devices are generated by incorporating optimization techniques into a hypothetical negative-image multiplier model. The negative-image device-modeling methodology provides the following advantages over previously developed techniques: (1) It can predict achievable multiplier performance in the device-modeling stage and (2) it provides an accurate starting point for the synthesis of impedance-matching networks. The negative-image device-modeling method is described, and its application to the design of a field-effect transistor (FET) frequency multiplier is presented. Results of an experimental implementation of the multiplier demonstrate the effectiveness of the proposed methodology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2544–2548, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25521
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