Frequency-Improved 4H-SiC IGBT With Multizone Collector Design

Abstract

A novel 4H-SiC multizone collector vertical insulated-gate bipolar transistor (MZC-IGBT) with an alternate P+/P−/P+ multizone structure in the collector region is proposed and investigated by numerical simulations in this article. Comparing with conventional 4H-SiC IGBTs, lower potential barrier regions are formed in the proposed MZC-IGBT at the interface between the N field-stop buffer and the collector region, modifying the carrier extraction effect to a proper level and resulting in a superior tradeoff between the static and dynamic performances. The proposed device consumes less energy in a wide frequency range. The numerical simulation reveals that the average dissipation power of the optimized 4H-SiC MZC-IGBT can be decreased by 63.1% at a high frequency of 20 kHz and even 2.26% at a low frequency of 500 Hz, which makes the proposed device much more suitable for high-frequency applications.