Frequency flicker of 2.3 GHz AlN-sapphire high-overtone bulk acoustic resonators

Abstract

We report the detailed characterization of 2.3 GHz AlN-Sapphire high-overtone bulk acoustic resonators (HBARs), with a typical loaded Q-factor of 25–30 × 103, 15–20 dB insertion loss, and resonances separated by about 10 MHz. The temperature coefficient of frequency of HBARs is measured to be about −25 ppm/K. We observe at high-input microwave power a significant distortion of the HBAR resonance lineshape, attributed to non-linear effects. The power-induced fractional frequency variation of the HBAR resonance is measured to be about −5 × 10−10/μW. The residual phase noise of a HBAR is measured in the range of −110 to −130 dBrad2/Hz at 1 Hz Fourier frequency, yielding resonator fractional frequency fluctuations at the level of −205 to −225 dB/Hz at 1 Hz and an ultimate HBAR-limited oscillator Allan deviation about 7 × 10−12 at 1 s integration time. The 1/f noise of the HBAR resonator is found to increase with the input microwave power. A HBAR resonator is used for the development of a low phase noise 2.3 GHz oscillator. An absolute phase noise of −60, −120, and −145 dBrad2/Hz for offset frequencies of 10 Hz, 1 kHz, and 10 kHz, respectively, in excellent agreement with the Leeson effect, is measured.