Abstract
In this study, a new simulation-based design of thin-film-transistor (TFT) frequency-doubling circuits is proposed. Considering the increasingly high technological relevance of novel TFT channel materials showing strongly unipolar charge transport characteristics, the proposed frequency doubler adopts a unipolar circuit topology composed of organic p-type TFTs as a model system. By comparing different circuit structures and optimizing key TFT parameters, an apparent symmetry at the specific, non-traditional voltage-transfer curve of the simple two-transistor logic inverter is obtained, which is directly exploited to produce an ideal frequency-multiplying behavior over a wide operational frequency range.
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