Frequency domain lifetime characterization

Abstract

Time-based measurements are commonly used for lifetime characterization of semiconductors. We have developed the theory, verified by experiment, of frequency-based lifetime characterization as an alternative to time-based measurements for MOS devices biased in inversion. One consideration during lifetime/diffusion length measurements, is whether the near-surface space-charge region or the bulk or quasineutral region is characterized. To characterize the near-surface space-charge region of the device, one usually makes room temperature pulsed MOS capacitor or diode leakage current measurements. We show that room-temperature, frequency-domain capacitance, conductance, or resistance measurements characterize the quasineutral bulk, not the space charge region, in contrast to room-temperature pulsed MOS-C or diode leakage current measurements which characterize the space-charge region.