Abstract
We report transit-time-limited bandwidth (12 GHz at 12-V bias) for an InGaP-InP-InGaAs MSM photodetector with 2-μm finger spacing, (100-μm) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> active area, and abrupt heterojunctions. The same device exhibits a very gradual rolloff up to 20 GHz, with an on/off isolation of greater than 40 dB across the measurement band. This is one of the first reports of transit-time-limited performance measured in the frequency domain for InGaAs-based MSM photodetectors, and these are the largest such devices reported to date. A pseudomorphic In/sub 0.8/Ga/sub 0.2/P cap layer is found to have an electrically stable free surface, requiring no special pre-treatment or passivation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
