Abstract
Thin films of La2Hf2O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900°C. The dielectric frequency dispersion was more serious for thinner films which is attributed to the effect of a lossy interfacial layer between the La2Hf2O7 dielectric and silicon substrate. The effect of the interfacial layer was modeled based on a dual-frequency measurement technique. The dielectric relaxation of the La2Hf2O7 thin films was modelled using both the Curie-von Schweidler and Havriliak-Negami relationships. Post deposition annealing in nitrogen at 900°C for 15min improved dielectric relaxation and reduced the dielectric loss.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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