Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

Abstract

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, Rxx, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ0. Here, we suggest a microwave frequency dependence of θ0(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.