Abstract
AbstractA high resistivity PD‐SOI MOSFET equivalent circuit model including a parallel connection of intrinsic output capacitance and conductance with frequency‐dependent empirical equations is newly proposed to accurately simulate their abrupt change in the low‐frequency region. This new empirical model is superior to a conventional RC one, because equivalent circuit structure and parameter extraction process are simpler. Better agreements with measured Y22‐parameter are obtained for the new model than the conventional one.
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