Frequency dependent dielectric properties of Cu0.5Tl0.5Ba2Ca2(Cu3-yMy)O10-δ superconductor

Abstract

The frequency dependent dielectric properties such as dielectric constants (ɛ/r, ɛ//r), absolute dielectric loss |tanδ|, and ac-conductivity (σac) of Cu0.5Tl0.5Ba2Ca2(Cu3-yMy)O10-δ (M = Si, Ge, Sn, y = 0, 1) superconductor have been investigated by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 KHz to 10 MHz at various temperatures from superconducting state to normal conducting state. The negative capacitance has been observed in all Cu0.5Tl0.5Ba2Ca2(Cu3-yMy)O10-δ samples. The large values of negative dielectric constant (ɛ/r) at lower frequencies and temperatures are linked with reduced thermal vibrations of the atoms due to which polarizability has been enhanced. The decreased value of dielectric constant observed in the Ge-doped samples may possibly be linked with its greater electronegativity (EN) and less polarization. The electronegativity of Si and Sn has approximately the same values as that of Cu, so almost all the dielectric properties do not vary significantly in Si-doped Cu0.5Tl0.5Ba2Ca2(Cu2Si1)O10-δ and Sn-doped Cu0.5Tl0.5Ba2Ca2(Cu2Sn1)O10-δ samples. These experimental investigations on dielectric properties of Cu0.5Tl0.5Ba2Ca2(Cu3-yMy)O10-δ superconductor have shown lower dielectric loss and higher ac-conductivity at all frequencies and temperatures as compared to that of other high Tc superconductor families. The decreased dielectric loss in Cu0.5Tl0.5Ba2Ca2(Cu3-yMy)O10-δ samples suggests that the polarization is most likely arising from the charge carriers between Cu0.5Tl0.5Ba2O4-δ charge reservoir layer and conducting CuO2/MO2 planes; since the charge reservoir layer has localized charge carriers at Ba+2, Tl+3, and Cu+2 sites, whereas CuO2/MO2 planes contain mobile charge carriers, which are displaced from their equilibrium position by external applied ac-field.