Abstract
Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency and voltage dependent dielectric constant (ε′), dielectric loss (ε″), tangent loss (tanδ), electrical modulus (M′ and M″), and ac electrical conductivity (σac) properties of Al/rubrene/p-Si Schottky diodes have been investigated in the frequency range of 1kHz–1MHz at room temperature. It is found that the values of the ε′, ε″ and tanδ decrease with increasing frequency while an increase is observed in σac and the real component (M′) of the electrical modulus. The values of ε′, ε″, and tanδ were found as 5.01, 2.55, and 0.51 for 1kHz and 2.46, 0.069, and 0.028 for 1MHz at zero bias, respectively. Furthermore, the imaginary component (M″) of the electric modulus showed a peak that shifts to a higher voltage with decreasing frequency.
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