Frequency dependent dielectric and impedance behavior of bismuth vanadate ceramics

Abstract

In present work, Bismuth vanadate (BiVO4: BVO) ceramics is synthesized by the traditional solid-state reaction method sintered at temperature of 800 ℃. The phase composition and crystal structure are confirmed by the X-ray diffraction (XRD) study. The microstructural analysis is performed by the field emission scanning electron microscopy (FE-SEM). It shows that, grains are highly dense with least porosity and clear grain boundaries. For the investigation of the dielectric properties, a wide range of frequency of 100 Hz – 1 MHz and 120 ℃ - 200 ℃ temperatures domain are selected. At lower frequency, real dielectric constant (ε′) of BVO ceramics increases with increase in temperature. The maximum value of ε′ for BVO ceramic is 427 at 120 ℃. Also, the tangent loss (tan δ) increases with increase in temperature.