Frequency-Dependent Complex Conductivities and Dielectric Responses of Indium Tin Oxide Thin Films From the Visible to the Far-Infrared

Abstract

Transparent and conducting indium tin oxide (ITO) thin films form an integral part for various optoelectronic devices. In this paper, we report the frequency-dependent complex conductivities and dielectric responses of several sputtered ITO thin films with thicknesses in the range of 189–962 nm by using terahertz time domain spectroscopy (THz-TDS), optical reflectance spectroscopy, and electrical measurements. The plasma frequencies are verified to be from 1590 to 1930 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm rad}\cdot{\rm THz}$</tex></formula> , while the scattering times are in the range 6–7 fs based on the Drude free-electron model. The mobilities of the above ITO thin films are calculated to be 32.7–34.2 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$</tex></formula> , whereas the carrier concentrations lie in the range 2.79–4.10 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\,\times 10^{20}~{\rm cm}^{-3}$</tex></formula> . The electrical properties derived from the THz-TDS technique agree well with those determined by Hall measurement. Parameters for the complex dielectric function suitable for ITO in the range 0.2–2 and 4–450 THz are also determined.