Abstract

Using submillimeter and microwave radiation up to 3-mm wavelength, we investigated the frequency dependence of the surface cyclotron resonance of both electrons and holes on ($1\overline{1}00$) tellurium surfaces in a metal-insulator-semiconductor arrangement. Special effort was made to observe the high-field transition of the surface hole in accumulation corresponding to the ${H}_{7}$ line in the bulk resonance spectra. The interpretation of the experimental results reveals an important increase of the cyclotron mass at low photon energies.

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