Abstract
ESR measurements are performed at 9.3 (x band), 35 (Q band) and 100 GHz as a function of spin concentration and temperature in pure a-Si deposited in UHV. The low temperature unsaturated signals are analysed using both linewidths and lineshapes. We find evidence for the presence of three different mechanisms : a concentration dependent g value distribution which inhomogeneously broadens the line and dipolar broadening and exchange narrowing which make the line almost homogenous at X band. All these mechanisms are within the same order of magnitude : 10 Gauss. The low value of exchange interaction agrees with a strong localisation of paramagnetic centers and confirms the Curie behavior of the susceptibility.
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