Abstract

The effects of driving frequency on plasma parameters and electron heating efficiency are studied in cylindrical inductively coupled plasma (ICP) source. Measurements are made in an Ar discharge for driving frequency at 13.56/2 MHz, and pressures of 0.4–1.2 Pa. In 13.56 MHz discharge, higher electron density (ne) and higher electron temperature (Te) are observed in comparison with 2 MHz discharge at 0.6–1.2 Pa. However, slightly higher ne and Te are observed in 2 MHz discharge at 0.4 Pa. This observation is explained by enhanced electron heating efficiency due to the resonance between the oscillation of 2 MHz electromagnetic field and electron-neutral collision process at 0.4 Pa. It is also found that the variation of Te distribution is different in 13.56 and 2 MHz discharge. For ICP at 13.56 MHz, Te shows an edge-high profile at 0.4–1.2 Pa. For 2 MHz discharge, Te remains an edge-high distribution at 0.4–0.8 Pa. However, the distribution pattern involves into a center-high profile at 0.9–1.2 Pa. The spatial profiles of ne remain a center-high shape in both 13.56 and 2 MHz discharges, which indicates the nonlocal kinetics at low pressures. Better uniformity could be achieved by using 2 MHz discharge. The effects of gas pressure on plasma parameters are also examined. An increase in gas pressure necessitates the rise of ne in both 13.56 and 2 MHz discharges. Meanwhile, Te drops when gas pressure increases and shows a flatter distribution at higher pressure.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.