Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology

Abstract

Integrated circuits fabricated at advanced technology nodes are expected to operate in gigahertz range of frequencies. At these frequencies, single-event transient (SET)-induced errors result in significant increases in single-event (SE) cross section for flip-flop (FF) designs. For FinFET transistors, the physical structure has changed significantly from planar structure. These changes have resulted in significantly less collected charge than that for planar technologies for the same ion strike, leading to shorter SET pulse generation. These results have necessitated the evaluation of SE cross section for FF designs as a function of frequency for accurate SE predictive capability. Circuit-level simulations and heavy-ion experiments were carried out to investigate frequency dependence of SE cross section for a hardened dual-interlocked cell-based FF design with different spacing options in a 16-nm bulk FinFET technology.