Abstract
The drift mobility was measured in phosphorus-doped hydrogenated amorphous silicon films using the traveling-wave technique as a function of surface acoustic Rayleigh wave frequency and temperature. In the high-temperature range in which the Fermi energy lies between the demarcation energy Ed = kBTln(v0/v) and the mobility edge, the drift mobility was found to be independent of the traveling wave frequency v in agreement with the multiple trapping theory. The frequency dependence of the acousto-electric voltage agrees with the predictions of the theory describing the interaction of the charge carriers with the traveling electric wave.
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