Abstract
Gallium nitride’s (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.
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